N-channel MOSFET with 30V drain-source voltage and 17.9A continuous drain current. Features low 9.5mΩ drain-to-source resistance and 1.22nF input capacitance. Operates within a -55°C to 150°C temperature range, with a 5W maximum power dissipation. Packaged in a surface-mount SOIC case, this component offers fast switching speeds with 13ns turn-on and 23ns turn-off delay times.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI7686DP-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI7686DP-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 17.9A |
| Drain to Source Resistance | 9.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.22nF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 9.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7686DP-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
