N-channel MOSFET with 30V drain-source voltage and 17.9A continuous drain current. Features low 9.5mΩ drain-to-source resistance and 1.22nF input capacitance. Operates within a -55°C to 150°C temperature range, with a 5W maximum power dissipation. Packaged in a surface-mount SOIC case, this component offers fast switching speeds with 13ns turn-on and 23ns turn-off delay times.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Vishay SI7686DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
17.9A
Drain to Source Resistance
9.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
1.22nF
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
5W
Radiation Hardening
No
Rds On Max
9.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
23ns
Turn-On Delay Time
13ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7686DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7686DP-T1-GE3 to view detailed technical specifications.
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