N-channel MOSFET, 30V Vdss, 12A continuous drain current, and 12.5mR Rds On. Features include 2.5V threshold voltage, 1.79nF input capacitance, and fast switching times with 23ns turn-on and 29ns turn-off delays. Operates from -50°C to 150°C with a 3.8W power dissipation. Surface mountable in a 1212-8 package, supplied on tape and reel.
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Vishay SI7720DN-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 12.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.79nF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Rds On Max | 12.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | SkyFET®, TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 23ns |
| Width | 3.05mm |
| RoHS | Compliant |
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