N-channel MOSFET transistor, 150V drain-source voltage, 30A continuous drain current, and 38mΩ drain-to-source resistance. Features include a 4V threshold voltage, 15ns turn-on delay, 25ns turn-off delay, and 10ns fall time. This surface-mount component operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 5.4W. Packaged in a PowerPAK SO 8-pin configuration, it is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7738DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
30A
Drain to Source Resistance
38mR
Drain to Source Voltage (Vdss)
150V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
2.1nF
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5.4W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
38mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
4V
Turn-Off Delay Time
25ns
Turn-On Delay Time
15ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7738DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7738DP-T1-GE3 to view detailed technical specifications.
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