N-channel MOSFET transistor for surface mount applications. Features 30V drain-source voltage (Vdss) and 50A continuous drain current (ID). Offers low 3.1mR drain-to-source resistance (Rds On Max) and 2.5V threshold voltage. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 5.2W. Packaged in an 8-pin SOIC PowerPAK for tape and reel delivery.
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Vishay SI7788DP-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 3.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 5.37nF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5.2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.1mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 44ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
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