The SI7804DN-T1-GE3 is a single N-CHANNEL TrenchFET MOSFET from Vishay with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 6.5A and a drain to source voltage of 30V. The device features a drain to source resistance of 18.5mR and a maximum power dissipation of 1.5W. It is packaged in a SMALL OUTLINE, S-XDSO-C5 package and is suitable for surface mount applications.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7804DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Resistance | 18.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 8ns |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7804DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7804DN-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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