N-channel MOSFET transistor for surface mount applications. Features 100V drain-source breakdown voltage and 3.4A continuous drain current. Offers a maximum drain-source on-resistance of 62mR at a nominal gate-source voltage of 4.5V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. Packaged in an 8-pin PowerPAK 1212 for tape and reel distribution.
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Vishay SI7810DNT1E3 technical specifications.
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 62mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 62mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Nominal Vgs | 4.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 62mR |
| Reach SVHC Compliant | Unknown |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Width | 3.05mm |
| RoHS | Compliant |
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