N-channel MOSFET transistor for surface mount applications. Features a 75V drain-source voltage and 7.2A continuous drain current. Offers a low 37mΩ drain-source on-resistance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 52W. Packaged in tape and reel for automated assembly.
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Vishay SI7812DN-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Resistance | 37mR |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 37mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 840pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Rds On Max | 37mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.3V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 15ns |
| Width | 3.05mm |
| RoHS | Compliant |
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