N-channel MOSFET with 150V drain-source voltage and 2.2A continuous drain current. Features 135mΩ maximum drain-source on-resistance and 4V threshold voltage. Operates from -55°C to 150°C with 1.5W maximum power dissipation. Surface mountable in an 8-pin PowerPAK 1212 package, supplied on tape and reel. Includes 10ns turn-on delay and 25ns turn-off delay.
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI7818DN-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Resistance | 135mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 135mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 135mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7818DN-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7818DN-T1-E3 to view detailed technical specifications.
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