The SI7850DP-T1 is a single N-channel MOSFET from Vishay with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 1.8W and a drain to source breakdown voltage of 60V. The device features a drain to source resistance of 22mR and a fall time of 10ns. It is available in a tape and reel packaging with 3000 units per package.
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Vishay SI7850DP-T1 technical specifications.
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| RoHS Compliant | No |
| Series | SI7 |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.002998oz |
| Width | 5.89mm |
| RoHS | Not Compliant |
No datasheet is available for this part.
