N-channel MOSFET transistor for surface mount applications. Features 60V drain-source breakdown voltage and 6.2A continuous drain current. Offers low 22mΩ drain-source on-resistance at a nominal gate-source voltage of 3V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.8W. Packaged in an 8-pin SOIC PowerPAK with tape and reel packaging.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI7850DP-T1-E3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI7850DP-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 22mR |
| Dual Supply Voltage | 60V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Width | 5.89mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7850DP-T1-E3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
