N-channel MOSFET transistor for surface mount applications. Features 60V drain-source breakdown voltage and 6.2A continuous drain current. Offers low 22mΩ drain-source on-resistance at a nominal gate-source voltage of 3V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.8W. Packaged in an 8-pin SOIC PowerPAK with tape and reel packaging.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
Vishay SI7850DP-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6.2A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
22mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
22mR
Dual Supply Voltage
60V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.8W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1.8W
Radiation Hardening
No
Rds On Max
22mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7850DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7850DP-T1-E3 to view detailed technical specifications.
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