N-channel MOSFET transistor with 60V drain-source voltage and 6.2A continuous drain current. Features low 22mΩ drain-source on-resistance and 3V threshold voltage. Operates from -55°C to 150°C with a maximum power dissipation of 1.8W. Packaged in an 8-pin SOIC surface-mount package, supplied on tape and reel. Includes fast switching times with 10ns turn-on delay and 10ns fall time.
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Vishay SI7850DP-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 22mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
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