N-channel power MOSFET featuring 80V drain-source breakdown voltage and a maximum continuous drain current of 7.6A. This surface-mount component offers a low 16.5mΩ drain-source on-resistance. It operates with a nominal gate-source voltage of 2V and boasts fast switching times, with turn-on delay at 17ns and fall time at 11ns. Housed in a compact SOIC package, it supports a maximum power dissipation of 1.9W and is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI7852DP-T1-E3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI7852DP-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 16.5mR |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 16.5mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 16.5mR |
| Reach SVHC Compliant | No |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7852DP-T1-E3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
