N-channel power MOSFET featuring 80V drain-source breakdown voltage and a maximum continuous drain current of 7.6A. This surface-mount component offers a low 16.5mΩ drain-source on-resistance. It operates with a nominal gate-source voltage of 2V and boasts fast switching times, with turn-on delay at 17ns and fall time at 11ns. Housed in a compact SOIC package, it supports a maximum power dissipation of 1.9W and is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.9W
Quick Jump:
Technical Specifications
Vishay SI7852DP-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 16.5mR |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 16.5mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 16.5mR |
| Reach SVHC Compliant | No |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7852DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7852DP-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
