The SI7858BDP-T1-GE3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 48W and a continuous drain current of 40A. The device features a drain to source resistance of 2.5mR and a drain to source voltage of 12V. It is lead free and RoHS compliant, packaged in a small outline R-XDSO-C5 package.
Sign in to ask questions about the Vishay SI7858BDP-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI7858BDP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 2.5mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 2.5MR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 5.76nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.01787oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7858BDP-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
