The SI7880ADP-T1-GE3 is a single N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 83W and a continuous drain current of 40A. The device is packaged in a small outline R-XDSO-C5 package and is RoHS compliant. It is suitable for surface mount applications and has a maximum drain to source voltage of 30V.
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Vishay SI7880ADP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.4W |
| Radiation Hardening | No |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 96ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.01787oz |
| RoHS | Compliant |
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