N-channel MOSFET with 12V drain-source voltage and 13A continuous drain current. Features 5.5mΩ maximum drain-source on-resistance at 4.5V gate-source voltage. This surface-mount SOIC package component offers a maximum power dissipation of 1.9W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 28ns and fall time of 32ns.
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Vishay SI7882DP-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 5.5mR |
| Dual Supply Voltage | 12V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Nominal Vgs | 1.4V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.4V |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 28ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
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