N-channel MOSFET with 30V drain-source voltage and 15A continuous drain current. Features low 4mΩ drain-to-source resistance at 10V gate-source voltage, enabling efficient power handling up to 1.9W. Designed for surface mount applications with a compact 4.9mm x 5.89mm x 1.04mm package. Offers fast switching characteristics with a 17ns turn-on delay and 43ns fall time. Operates across a wide temperature range from -55°C to 150°C.
Resistance0.004R
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7886ADP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 15A |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 43ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.04mm |
| Input Capacitance | 6.45nF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 4mR |
| Resistance | 0.004R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 158ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7886ADP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7886ADP-T1-GE3 to view detailed technical specifications.
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