N-channel MOSFET transistor for surface mount applications. Features a 150V drain-source voltage (Vdss) and a continuous drain current (ID) of 3A. Offers a low drain-source on-resistance (Rds On) of 85mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.9W. Packaged in an 8-pin SOIC for tape and reel delivery.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.9W
Quick Jump:
Technical Specifications
Vishay SI7898DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3A
Drain to Source Resistance
85mR
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
85MR
Dual Supply Voltage
150V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.9W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.9W
Radiation Hardening
No
Rds On Max
85mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
2V
Turn-Off Delay Time
24ns
Turn-On Delay Time
9ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7898DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7898DP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
