Dual N-channel power MOSFET featuring 20V drain-source voltage and 6A continuous drain current. Offers low 26mΩ drain-to-source resistance for efficient power handling. Surface-mount design in a compact PowerPAK-8 package with 1.04mm height, 3.05mm width, and 3.05mm length. Operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7900AEDN-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 1300ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 8600ns |
| Turn-On Delay Time | 850ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7900AEDN-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7900AEDN-T1-E3 to view detailed technical specifications.
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