Dual N-channel MOSFET featuring 20V drain-source voltage and 6A continuous drain current. Offers low 30mΩ drain-source on-resistance and fast switching speeds with 5ns turn-on delay and 5ns fall time. Designed for surface mount applications with a compact 3.05mm x 3.05mm x 1.04mm package. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 17.8W. Lead-free and RoHS compliant.
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Vishay SI7904BDN-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 30mR |
| Fall Time | 5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 17.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 5ns |
| Width | 3.05mm |
| RoHS | Compliant |
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