SI7913DN-T1-E3

P-CH MOSFET, 20V, 5A, 37mR Rds On, 2-Ch, SMT

P-Channel MOSFET, 20V Drain-Source Voltage, 5A Continuous Drain Current, 37mΩ Max Drain-Source On Resistance. Features 2 channels, 1.3W max power dissipation, and operates from -55°C to 150°C. Surface mount package with 3.05mm length, 3.05mm width, and 1.04mm height. Includes 20ns turn-on delay and 70ns fall time.

MountingSurface Mount

PolarityP-CHANNEL

Power1.3W

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Technical Specifications

Vishay SI7913DN-T1-E3 technical specifications.

General

Continuous Drain Current (ID)	5A
Drain to Source Breakdown Voltage	-20V
Drain to Source Resistance	37mR
Drain to Source Voltage (Vdss)	20V
Drain-source On Resistance-Max	37mR
Fall Time	70ns
Gate to Source Voltage (Vgs)	8V
Height	1.04mm
Lead Free	Lead Free
Length	3.05mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.3W
Mount	Surface Mount
Number of Channels	2
Number of Elements	2
Package Quantity	1
Packaging	Tape and Reel
Polarity	P-CHANNEL
Polarization	P
Power Dissipation	1.3W
Radiation Hardening	No
Rds On Max	37mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	72ns
Turn-On Delay Time	20ns
Width	3.05mm