P-Channel MOSFET, 20V Drain-Source Voltage, 5A Continuous Drain Current, 37mΩ Max Drain-Source On Resistance. Features 2 channels, 1.3W max power dissipation, and operates from -55°C to 150°C. Surface mount package with 3.05mm length, 3.05mm width, and 1.04mm height. Includes 20ns turn-on delay and 70ns fall time.
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Vishay SI7913DN-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 37mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 37mR |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 37mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 20ns |
| Width | 3.05mm |
| RoHS | Compliant |
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