N-Channel MOSFET transistor featuring 100V drain-source voltage and 1.8A continuous drain current. Offers a maximum drain-source on-resistance of 195mR. Designed for surface mount applications with a 3.05mm x 3.05mm x 1.04mm PowerPAK 1212 package. Includes fast switching characteristics with turn-on delay time of 7ns and fall time of 11ns. Operates across a temperature range of -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7922DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Resistance | 195mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 195mR |
| Fall Time | 11ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 195mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 7ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7922DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7922DN-T1-GE3 to view detailed technical specifications.
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