N-Channel MOSFET featuring 40V Drain-to-Source Voltage (Vdss) and 60A Continuous Drain Current (ID). This dual N-Channel MOSFET offers a low Drain-to-Source On-Resistance (Rds On) of 5.8mR at a nominal Gate-to-Source Voltage (Vgs) of 2.5V. With a maximum power dissipation of 46W and a fast fall time of 15ns, it is designed for efficient switching applications. The component is surface mountable in an 8-pin package, RoHS compliant, and operates within a temperature range of -55°C to 150°C.
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Vishay SI7938DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 5.8mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 15ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.17mm |
| Input Capacitance | 2.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 46W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.5W |
| Rds On Max | 5.8mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.01787oz |
| RoHS | Compliant |
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