SI7938DP-T1-GE3

40V 60A N-CH MOSFET 5.8mR 2-Ch Surface Mount

N-Channel MOSFET featuring 40V Drain-to-Source Voltage (Vdss) and 60A Continuous Drain Current (ID). This dual N-Channel MOSFET offers a low Drain-to-Source On-Resistance (Rds On) of 5.8mR at a nominal Gate-to-Source Voltage (Vgs) of 2.5V. With a maximum power dissipation of 46W and a fast fall time of 15ns, it is designed for efficient switching applications. The component is surface mountable in an 8-pin package, RoHS compliant, and operates within a temperature range of -55°C to 150°C.

MountingSurface Mount

PolarityN-CHANNEL

Power3.5W

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Technical Specifications

Vishay SI7938DP-T1-GE3 technical specifications.

General

Continuous Drain Current (ID)	60A
Drain to Source Resistance	5.8mR
Drain to Source Voltage (Vdss)	40V
Fall Time	15ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Height	1.17mm
Input Capacitance	2.3nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	46W
Mount	Surface Mount
Nominal Vgs	2.5V
Number of Channels	2
Number of Elements	2
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	3.5W
Rds On Max	5.8mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Series	TrenchFET®
Threshold Voltage	2.5V
Turn-Off Delay Time	40ns
Turn-On Delay Time	25ns
Weight	0.01787oz