SI7940DP-T1-GE3

Trans MOSFET N-CH 12V 7.6A 8-Pin PowerPAK SO T/R

PackageSOIC

MountingSurface Mount

PolarityN-CHANNEL

Power1.4W

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Vishay SI7940DP-T1-GE3 technical specifications.

Package/Case	SOIC
Continuous Drain Current (ID)	7.6A
Drain to Source Breakdown Voltage	12V
Drain to Source Resistance	17mR
Drain to Source Voltage (Vdss)	12V
Fall Time	50ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	8V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.4W
Mount	Surface Mount
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	1.4W
Radiation Hardening	No
Rds On Max	17mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	60ns
Turn-On Delay Time	30ns