The SI7940DP-T1-GE3 is a 2 N-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 7.6A and a drain to source breakdown voltage of 12V. The device is packaged in a SOIC package and is RoHS compliant. The MOSFET has a maximum power dissipation of 1.4W and a gate to source voltage of 8V.
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Vishay SI7940DP-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 50ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 30ns |
| RoHS | Compliant |
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