Dual N-Channel Power MOSFET, 100V Vdss, 49mR Rds On Max, 3.8A Continuous Drain Current. Features 2 N-Channel elements in a PowerPAK SO-8 surface mount package with 1.4W power dissipation. Operates from -55°C to 150°C, with fast switching times including 15ns turn-on and 20ns fall time. RoHS compliant and lead-free.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
Vishay SI7942DP-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.8A
Drain to Source Resistance
49mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
49mR
Dual Supply Voltage
100V
Fall Time
20ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.4W
Radiation Hardening
No
Rds On Max
49mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Turn-Off Delay Time
35ns
Turn-On Delay Time
15ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7942DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7942DP-T1-E3 to view detailed technical specifications.
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