N-channel MOSFET transistor, 100V drain-source voltage, 3.8A continuous drain current, and 49mΩ drain-source resistance. Features 2 N-channel FETs with a 15ns turn-on delay and 35ns turn-off delay. Packaged in an 8-pin SOIC surface mount case, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 1.4W.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7942DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Resistance | 49mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 15ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 49mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7942DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7942DP-T1-GE3 to view detailed technical specifications.
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