Dual N-channel MOSFET, 60V Drain-Source Voltage, 3A Continuous Drain Current, and 75mΩ Rds On. This surface mount transistor features a PPAK SO-8 package with a maximum power dissipation of 1.4W and operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 7ns turn-on delay and an 8ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7948DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3A
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
60V
Fall Time
8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Number of Channels
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
75mR
RoHS Compliant
Yes
Series
SI7
Turn-Off Delay Time
15ns
Turn-On Delay Time
7ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7948DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7948DP-T1-GE3 to view detailed technical specifications.
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