Dual N-channel MOSFET, 150V drain-source voltage, 2.6A continuous drain current, and 105mΩ drain-source resistance. Features include a 1.4W power dissipation, 36ns fall time, 18ns turn-off delay, and 13ns turn-on delay. Packaged in a PPAK SO-8 surface-mount SOIC, this RoHS compliant component operates from -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
Vishay SI7956DP-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Resistance | 105mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 36ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 105mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7956DP-T1-E3 Datasheet
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