N-channel MOSFET featuring 40V drain-source voltage and 7.2A continuous drain current. Offers a low 16.5mΩ maximum drain-source on-resistance. This surface mount device is housed in a SOIC package with a 1.4W maximum power dissipation. Includes two N-channel FETs with a 3V threshold voltage and fast switching times, including 17ns turn-on delay.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7958DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Resistance | 16.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 16.5mR |
| Fall Time | 17ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 16.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7958DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7958DP-T1-GE3 to view detailed technical specifications.
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