The SI7964DP-T1-GE3 is a 60V N-Channel TrenchFET MOSFET with a maximum continuous drain current of 6.1A and a maximum drain to source resistance of 23mR. It operates over a temperature range of -55°C to 150°C and is suitable for surface mount applications. This device is RoHS compliant and features a maximum power dissipation of 1.4W.
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Vishay SI7964DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 6.1A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 20ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7964DP-T1-GE3 to view detailed technical specifications.
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