P-channel MOSFET with 30V drain-source voltage and 20.8A continuous drain current. Features low 5.5mΩ drain-source on-resistance and 46W maximum power dissipation. Operates across a -55°C to 150°C temperature range, with a 40ns fall time. Surface mountable in an 8-pin PowerPAK SO package, supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
Power3.5W
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Technical Specifications
Vishay SI7997DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 20.8A |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5.5mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 46W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.5W |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -2.2V |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7997DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7997DP-T1-GE3 to view detailed technical specifications.
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