
P-channel MOSFET with 30V drain-source voltage and 20.8A continuous drain current. Features low 5.5mΩ drain-source on-resistance and 46W maximum power dissipation. Operates across a -55°C to 150°C temperature range, with a 40ns fall time. Surface mountable in an 8-pin PowerPAK SO package, supplied on tape and reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI7997DP-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Continuous Drain Current (ID) | 20.8A |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5.5mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 46W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.5W |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -2.2V |
| Weight | 0.01787oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7997DP-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
