N-channel MOSFET with 30V drain-source voltage and 30A continuous drain current. Features 9.3mΩ maximum drain-source on-resistance and 40W maximum power dissipation. This surface-mount component offers 2 N-channel FETs, with input capacitance of 1.1nF and fall time of 10ns. Operating temperature range is -55°C to 150°C.
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Vishay SI7998DP-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 9.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9.3mR |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 9.3mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 26ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
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