P-channel MOSFET with a 20V drain-source voltage (Vdss) and 3.6A continuous drain current (ID). Features a low 65mΩ drain-source on-resistance (Rds On Max) and 1.47W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. This surface-mount component is packaged in tape and reel, offering fast switching speeds with turn-on delay of 17ns and fall time of 28ns.
MountingSurface Mount
PolarityP-CHANNEL
Power1.47W
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Technical Specifications
Vishay SI8401DB-T1-E3 technical specifications.
General
Continuous Drain Current (ID)
3.6A
Drain to Source Resistance
65mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
65mR
Fall Time
28ns
Gate to Source Voltage (Vgs)
12V
Height
0.36mm
Lead Free
Lead Free
Length
1.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.47W
Mount
Surface Mount
Nominal Vgs
-4.5V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.47W
Radiation Hardening
No
Rds On Max
65mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
-4.5V
Turn-Off Delay Time
88ns
Turn-On Delay Time
17ns
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI8401DB-T1-E3 Datasheet
Download the complete datasheet for Vishay SI8401DB-T1-E3 to view detailed technical specifications.
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