P-channel MOSFET with a 20V drain-source voltage (Vdss) and 3.6A continuous drain current (ID). Features a low 65mΩ drain-source on-resistance (Rds On Max) and 1.47W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. This surface-mount component is packaged in tape and reel, offering fast switching speeds with turn-on delay of 17ns and fall time of 28ns.
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Vishay SI8401DB-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 65mR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.36mm |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.47W |
| Mount | Surface Mount |
| Nominal Vgs | -4.5V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.47W |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | -4.5V |
| Turn-Off Delay Time | 88ns |
| Turn-On Delay Time | 17ns |
| Width | 1.6mm |
| RoHS | Compliant |
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