N-channel MOSFET transistor featuring 20V drain-source voltage and 16A continuous drain current. Offers low 33mΩ Rds On resistance at 4.5V gate-source voltage. Designed for surface mount applications with a compact 1.5mm x 1mm BGA package. Boasts fast switching speeds with 7ns turn-on delay and 10ns fall time. Operates across a wide temperature range from -55°C to 150°C.
PackageBGA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI8406DB-T2-E1 technical specifications.
General
Package/Case
BGA
Continuous Drain Current (ID)
16A
Drain to Source Resistance
33mR
Drain to Source Voltage (Vdss)
20V
Fall Time
10ns
Gate to Source Voltage (Vgs)
8V
Height
0.31mm
Input Capacitance
830pF
Lead Free
Lead Free
Length
1.5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
13W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
33mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
400mV
Turn-Off Delay Time
30ns
Turn-On Delay Time
7ns
Width
1mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI8406DB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8406DB-T2-E1 to view detailed technical specifications.
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