N-channel MOSFET, general-purpose power transistor with a 8V Drain to Source Voltage (Vdss) and 16A Continuous Drain Current (ID). Features a low 23mR Drain to Source Resistance (Rds On Max) and a 350mV Threshold Voltage. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 13W. Packaged in a compact 1.5mm x 1mm BGA for surface mounting, with fast switching characteristics including a 13ns Turn-On Delay Time and 20ns Fall Time.
PackageBGA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI8416DB-T2-E1 technical specifications.
General
Package/Case
BGA
Continuous Drain Current (ID)
16A
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
8V
Fall Time
20ns
Gate to Source Voltage (Vgs)
5V
Height
0.31mm
Input Capacitance
1.47nF
Length
1.5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
13W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
23mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
350mV
Turn-Off Delay Time
40ns
Turn-On Delay Time
13ns
Width
1mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI8416DB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8416DB-T2-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
