N-channel MOSFET, 8V drain-source voltage, 10A continuous drain current, and 20mΩ maximum drain-source on-resistance. Features a 5V gate-source voltage, 800mV threshold voltage, and 2.34nF input capacitance. Operates across a -55°C to 150°C temperature range with 2.7W maximum power dissipation. Surface mountable, lead-free, and RoHS compliant, this component is supplied on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI8424CDB-T1-E1 technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 20mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 5V |
| Input Capacitance | 2.34nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8424CDB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8424CDB-T1-E1 to view detailed technical specifications.
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