N-channel MOSFET, 8V drain-source voltage, 10A continuous drain current, and 20mΩ maximum drain-source on-resistance. Features a 5V gate-source voltage, 800mV threshold voltage, and 2.34nF input capacitance. Operates across a -55°C to 150°C temperature range with 2.7W maximum power dissipation. Surface mountable, lead-free, and RoHS compliant, this component is supplied on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI8424CDB-T1-E1 technical specifications.
General
Continuous Drain Current (ID)
10A
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
8V
Drain-source On Resistance-Max
20mR
Fall Time
40ns
Gate to Source Voltage (Vgs)
5V
Input Capacitance
2.34nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.7W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
20mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
800mV
Turn-Off Delay Time
150ns
Turn-On Delay Time
30ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI8424CDB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8424CDB-T1-E1 to view detailed technical specifications.
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