P-Channel MOSFET with 8V drain-source voltage and 11.7A continuous drain current. Features low 35mΩ maximum drain-source on-resistance and 1.64nF input capacitance. Operates from -55°C to 150°C with 2.77W maximum power dissipation. Surface mountable in a 1.6mm x 1.6mm x 0.36mm package, supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI8429DB-T1-E1 technical specifications.
General
| Continuous Drain Current (ID) | 11.7A |
| Drain to Source Resistance | 43mR |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 35mR |
| Fall Time | 155ns |
| Gate to Source Voltage (Vgs) | 5V |
| Height | 0.36mm |
| Input Capacitance | 1.64nF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.77W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -600mV |
| Turn-Off Delay Time | 260ns |
| Turn-On Delay Time | 12ns |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8429DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8429DB-T1-E1 to view detailed technical specifications.
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