P-Channel MOSFET with 8V drain-source voltage and 11.7A continuous drain current. Features low 35mΩ maximum drain-source on-resistance and 1.64nF input capacitance. Operates from -55°C to 150°C with 2.77W maximum power dissipation. Surface mountable in a 1.6mm x 1.6mm x 0.36mm package, supplied on tape and reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI8429DB-T1-E1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Continuous Drain Current (ID) | 11.7A |
| Drain to Source Resistance | 43mR |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 35mR |
| Fall Time | 155ns |
| Gate to Source Voltage (Vgs) | 5V |
| Height | 0.36mm |
| Input Capacitance | 1.64nF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.77W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -600mV |
| Turn-Off Delay Time | 260ns |
| Turn-On Delay Time | 12ns |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI8429DB-T1-E1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
