P-Channel MOSFET with 8V drain-source voltage and 11.7A continuous drain current. Features low 35mΩ maximum drain-source on-resistance and 1.64nF input capacitance. Operates from -55°C to 150°C with 2.77W maximum power dissipation. Surface mountable in a 1.6mm x 1.6mm x 0.36mm package, supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI8429DB-T1-E1 technical specifications.
General
Continuous Drain Current (ID)
11.7A
Drain to Source Resistance
43mR
Drain to Source Voltage (Vdss)
-8V
Drain-source On Resistance-Max
35mR
Fall Time
155ns
Gate to Source Voltage (Vgs)
5V
Height
0.36mm
Input Capacitance
1.64nF
Length
1.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.77W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
35mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-600mV
Turn-Off Delay Time
260ns
Turn-On Delay Time
12ns
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI8429DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8429DB-T1-E1 to view detailed technical specifications.
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