N-channel MOSFET with 20V drain-source voltage and 2.8A continuous drain current. Features low drain-source on-resistance of 80mΩ maximum and 95mΩ typical. Operates across a temperature range of -55°C to 125°C with a maximum power dissipation of 500mW. This surface-mount device is supplied on tape and reel, offering a 350ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI8800EDB-T2-E1 technical specifications.
General
Continuous Drain Current (ID)
2.8A
Drain to Source Resistance
95mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
80mR
Fall Time
350ns
Gate to Source Voltage (Vgs)
8V
Lead Free
Lead Free
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Channels
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
80mR
RoHS Compliant
Yes
Series
TrenchFET®
Compliance
RoHS
Compliant
Datasheet
Vishay SI8800EDB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8800EDB-T2-E1 to view detailed technical specifications.
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