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Technical Specifications
Vishay SI8901EDB-T2-E1 technical specifications.
General
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 60mR |
| Fall Time | 2200ns |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.7W |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -450mV |
| Turn-Off Delay Time | 1300ns |
| Turn-On Delay Time | 2300ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8901EDB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8901EDB-T2-E1 to view detailed technical specifications.
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