P-channel MOSFET with -60V drain-source breakdown voltage and 120mΩ maximum drain-source on-resistance. Features a continuous drain current of 3.5A and a gate-source voltage range of ±20V, with a nominal threshold voltage of -3V. This SMD/SMT component operates from -55°C to 175°C, offers a maximum power dissipation of 3W, and includes fast switching times with turn-on delay of 8ns and fall time of 12ns. Packaged in SO for tape and reel distribution.
PackageSO
PolarityP-CHANNEL
Power3W
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Technical Specifications
Vishay SI9407AEY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 120mR |
| Dual Supply Voltage | -60V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Nominal Vgs | -3V |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 3W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SI9 |
| Termination | SMD/SMT |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI9407AEY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI9407AEY-T1-E3 to view detailed technical specifications.
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