P-channel MOSFET, 60V Drain-Source Voltage (Vdss), 3.2A Continuous Drain Current (ID), and 120mΩ Drain-Source On-Resistance (Rds On). Features a 30ns turn-on delay and 40ns turn-off delay, with 30ns fall time. Housed in an 8-pin SOIC package for surface mounting, operating from -55°C to 150°C with a maximum power dissipation of 5W. This RoHS compliant component offers 600pF input capacitance and a 20V Gate-Source Voltage (Vgs).
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI9407BDY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 600pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 120mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI9407BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI9407BDY-T1-E3 to view detailed technical specifications.
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