N-channel, general-purpose small-signal MOSFET featuring a 30V drain-source voltage and 6.2A continuous drain current. This surface-mount device offers a low 24mΩ drain-source on-resistance and operates across a wide temperature range of -55°C to 150°C. With a 1.5W power dissipation and fast switching times, including a 10ns turn-on delay and 15ns fall time, it is suitable for demanding applications. The component is packaged in an 8-pin SOP (Small Outline Package) and is RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI9410BDY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
6.2A
Drain to Source Resistance
24mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
24mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
24mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI9410BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI9410BDY-T1-E3 to view detailed technical specifications.
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