
P-channel MOSFET with a 20V drain-source voltage and 4.5A continuous drain current. Features a low 40mΩ maximum drain-source on-resistance. Operates across a -55°C to 150°C temperature range with a 1.3W maximum power dissipation. Packaged in an 8-SOIC surface-mount case, this component is RoHS compliant.
Vishay SI9433BDY-T1-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 40mR |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -600mV |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 40ns |
| Weight | 0.01787oz |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI9433BDY-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
