N-channel MOSFET, surface mount, SO package. Features 20V drain-source breakdown voltage, 4.8A continuous drain current, and 30mΩ drain-source resistance. Operates with a 12V gate-source voltage, exhibiting 22ns turn-on delay and 40ns fall time. Maximum power dissipation is 1.25W, with operating temperatures from -55°C to 150°C. RoHS compliant.
Vishay SI9926ADY-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | SI9 |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 22ns |
| Weight | 0.01787oz |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
