Dual N-channel MOSFET for general-purpose small signal applications. Features 20V drain-source voltage, 8A continuous drain current, and 18mΩ drain-source on-resistance. Operates with a 1.5V threshold voltage and 12V gate-source voltage. Packaged in a surface-mount SOIC-8 package, this component offers 1.2nF input capacitance and fast switching times with 10ns turn-on and fall times. Compliant with RoHS standards.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI9926CDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8A
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
18mR
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
18mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.5V
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI9926CDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI9926CDY-T1-GE3 to view detailed technical specifications.
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