Dual N-channel MOSFET for general-purpose small signal applications. Features 20V drain-source voltage, 8A continuous drain current, and 18mΩ drain-source on-resistance. Operates with a 1.5V threshold voltage and 12V gate-source voltage. Packaged in a surface-mount SOIC-8 package, this component offers 1.2nF input capacitance and fast switching times with 10ns turn-on and fall times. Compliant with RoHS standards.
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| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 18mR |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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