P-Channel Silicon Metal-oxide Semiconductor FET, a 2-element junction field-effect transistor designed for surface mounting. Features a 20V drain-to-source voltage, 3.6A continuous drain current, and 60mΩ drain-to-source resistance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.1W. Includes fast switching characteristics with turn-on delay of 22ns and turn-off delay of 45ns. Packaged in a RoHS compliant SOP-8 (SO) package.
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Vishay SI9933BDY-T1-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 22ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
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