SI9933BDY-T1-E3

P-Channel Silicon Metal-oxide Semiconductor FET, a 2-element junction field-effect transistor designed for surface mounting. Features a 20V drain-to-source voltage, 3.6A continuous drain current, and 60mΩ drain-to-source resistance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.1W. Includes fast switching characteristics with turn-on delay of 22ns and turn-off delay of 45ns. Packaged in a RoHS compliant SOP-8 (SO) package.