P-channel, 2-channel general-purpose small signal MOSFET for surface mount applications. Features a continuous drain current of 4A, drain-source voltage of -20V, and a maximum drain-source on-resistance of 58mR. Operates within a temperature range of -50°C to 150°C with a maximum power dissipation of 3.1W. Packaged in a SOIC (SOP-8) package, this component is halogen-free and RoHS compliant.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power2W
Quick Jump:
Technical Specifications
Vishay SI9933CDY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 58mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 58mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.55mm |
| Input Capacitance | 665pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | -1.4V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 58mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.4V |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 21ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI9933CDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI9933CDY-T1-GE3 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
