N-Channel Power MOSFET, featuring a 60V drain-source voltage and 3.7A continuous drain current. This surface-mount device offers a low 80mΩ drain-source resistance. Designed with two N-channel elements, it operates within a -55°C to 175°C temperature range and has a maximum power dissipation of 2.4W. Key switching characteristics include a 9ns turn-on delay and an 8ns fall time.
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| Package/Case | SO |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 80mR |
| RoHS Compliant | No |
| Series | TrenchFET® |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Not Compliant |
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