Vishay
SI9945AEY-T1-GE3
Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
PackageSO
PolarityN-CHANNEL
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Technical Specifications
Vishay SI9945AEY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Series | SI9 |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI9945AEY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI9945AEY-T1-GE3 to view detailed technical specifications.
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