N-channel Power MOSFET, TrenchFET technology, 60V drain-source voltage, 5.3A continuous drain current, and 58mOhm maximum drain-source resistance at 10V. Features dual dual drain configuration with 2 elements per chip, 3V gate threshold voltage, and ±20V gate-source voltage. Housed in an 8-pin SOIC N (SOP) lead-frame SMT package with gull-wing leads, measuring 5mm x 4mm x 1.55mm. Operates from -55°C to 150°C with a maximum power dissipation of 2000mW.
PackageSOIC N
MountingSurface Mount
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Technical Specifications
Vishay Si9945BDY-T1-GE3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOIC N
Package Description
Small Outline IC Narrow Body
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5(Max)
Package Width (mm)
4(Max)
Package Height (mm)
1.55(Max)
Seated Plane Height (mm)
1.75(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Package Orientation
Yes
Package Orientation Marking Type
Beveled Edge
Jedec
MS-012
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Process Technology
TrenchFET
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
5.3A
Maximum Gate Threshold Voltage
3V
Maximum Drain Source Resistance
58@10VmOhm
Typical Gate Charge @ Vgs
13@10V|[email protected]nC
Typical Gate Charge @ 10V
13nC
Typical Input Capacitance @ Vds
665@15VpF
Maximum Power Dissipation
2000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
75pF
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay Si9945BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay Si9945BDY-T1-GE3 to view detailed technical specifications.
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