N-channel MOSFET, 30V Drain-Source Voltage (Vdss), 4.5A Continuous Drain Current (ID). Features low 36mΩ Drain-Source On-Resistance at 10V Vgs. Operates with a nominal Gate-Source Voltage (Vgs) of 1.6V and a maximum Gate-Source Voltage of 12V. Offers a maximum power dissipation of 3.4W and a maximum operating temperature of 150°C. Packaged in a compact SC case for surface mounting, with dimensions of 2.05mm length and 2.05mm width.
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Vishay SIA408DJ-T1-GE3 technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 36mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.75mm |
| Input Capacitance | 830pF |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.4W |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.4W |
| Radiation Hardening | No |
| Rds On Max | 36mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 10ns |
| Width | 2.05mm |
| RoHS | Compliant |
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